AO4488L
AO4488L Datasheet
AO4488
| Part | Datasheet |
|---|---|
AO4488L |
AO4488L (pdf) |
| Related Parts | Information |
|---|---|
|
AO4488L_101 |
AO4488L_101 |
|
AO4488 |
AO4488 |
| PDF Datasheet Preview |
|---|
| AO4488 30V N-Channel MOSFET The AO4488 uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is ESD protected and it is suitable for use as a load switch or in PWM applications. Product Summary VDS V = 30V ID = 20A VGS = 10V RDS ON < VGS = 10V RDS ON < VGS = 4.5V ESD Protected 100% UIS Tested 100% Rg Tested SOIC-8 Top View Bottom View S Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter 10 Sec Steady State Drain-Source Voltage Gate-Source Voltage ±20 Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B Avalanche Current G Repetitive avalanche energy L=0.3mH G Power Dissipation A TA=25°C TA=70°C Junction and Storage Temperature Range TJ, TSTG -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A t 10s Maximum Junction-to-Ambient A Steady State 31 59 40 75 Maximum Junction-to-Lead C Steady State Units V |
| More datasheets: AT49BV1614A-70CI | AT49BV1604A-70CI | AT49BV1604A-70TI | AT49BV1604A-90CI | AT49BV1604A-90TI | AT49BV1604AT-70CI | AT49BV1604AT-70TI | AT49BV1604AT-90CI | AT49BV1614AT-90TI | 19-213SYGC/S530-E2/TR8 |
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