AO4450L
AO4450L Datasheet
AO4450 N-Channel Enhancement Mode Field Effect Transistor
| Part | Datasheet |
|---|---|
AO4450L |
AO4450L (pdf) |
| PDF Datasheet Preview |
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| AO4450 N-Channel Enhancement Mode Field Effect Transistor The AO4450 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4450 is Pb-free meets ROHS & Sony 259 specifications . AO4450L is a Green Product ordering option. AO4450 and AO4450L are electrically identical. VDS V = 40V ID = 6.6A VGS = 10V RDS ON VGS = 10V RDS ON < VGS = 4.5V SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B Power Dissipation TA=25°C TA=70°C Junction and Storage Temperature Range TJ, TSTG Maximum 40 ±20 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A t 10s Steady-State 38 69 Maximum Junction-to-Lead C Steady-State Max 50 80 30 Units V W °C Units °C/W °C/W °C/W AO4450 N Channel Electrical Characteristics TJ=25°C unless otherwise noted Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=32V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS= ±20V |
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