AO4440L
AO4440L Datasheet
AO4440
| Part | Datasheet |
|---|---|
AO4440L |
AO4440L (pdf) |
| PDF Datasheet Preview |
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| AO4440 60V N-Channel MOSFET The AO4440 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Product Summary VDS V = 60V ID = 5A VGS = 10V RDS ON < VGS = 10V RDS ON < VGS = 4.5V 100% UIS Tested 100% Rg Tested SOIC-8 Top View Bottom View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B Power Dissipation TA=25°C TA=70°C Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 5 4 20 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A t 10s Steady-State 38 69 50 80 Maximum Junction-to-Lead C Steady-State Units V W °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO4440 N Channel Electrical Characteristics TJ=25°C unless otherwise noted Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V |
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