AO4406
AO4406 Datasheet
AO4406 N-Channel Enhancement Mode Field Effect Transistor
| Part | Datasheet |
|---|---|
AO4406 |
AO4406 (pdf) |
| PDF Datasheet Preview |
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| AO4406 N-Channel Enhancement Mode Field Effect Transistor The AO4406/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device makes an excellent high side switch for notebook CPU core DC-DC conversion. AO4406 and AO4406L are electrically identical. -RoHS Compliant -AO4406L is Halogen Free VDS V = 30V ID = 11.5A VGS = 10V RDS ON < VGS = 10V RDS ON < VGS = 4.5V RDS ON < VGS = 2.5V UIS TESTED! Rg,Ciss,Coss,Crss Tested SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C Current AF TA=70°C Pulsed Drain Current B Avalanche Current B Repetitive Avalanche Energy B L=0.3mH Power Dissipation TA=25°C TA=70°C Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±12 80 25 94 3 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient AF Maximum Junction-to-Ambient A t 10s Steady-State 23 48 40 65 Maximum Junction-to-Lead C Steady-State Units V A mJ W °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO4406 Electrical Characteristics TJ=25°C unless otherwise noted Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS th ID ON Gate-Body leakage current Gate Threshold Voltage On state drain current |
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