AO4202L

AO4202L Datasheet

AO4202L

Part	Datasheet
AO4202L	AO4202L (pdf)

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AO4202L 30V N-Channel MOSFET The AO4202L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS ON and Crss. In addition, switching behavior is well controlled with a “Schottky style” soft recovery body diode. Product Summary VDS ID at VGS=10V RDS ON at VGS=10V RDS ON at VGS = 4.5V 100% UIS Tested 100% Rg Tested 30V 19A < < SOIC-8 D Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C IDM IAS, IAR EAS, EAR TA=25°C Power Dissipation B TA=70°C Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 19 15 130 38 72 2 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A t 10s Maximum Junction-to-Ambient A D Steady-State 31 59 Maximum Junction-to-Lead Steady-State Max 40 75 24 Units V A mJ W °C Units °C/W °C/W °C/W Page 1 of 6 AO4402L Electrical Characteristics TJ=25°C unless otherwise noted Parameter Conditions Min Typ Max Units STATIC PARAMETERS

PDF Datasheet Preview

AO4202L
30V N-Channel MOSFET

The AO4202L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS ON and Crss. In addition, switching behavior is well controlled with a “Schottky style” soft recovery body diode.

Product Summary

VDS ID at VGS=10V RDS ON at VGS=10V RDS ON at VGS = 4.5V
100% UIS Tested 100% Rg Tested
30V 19A < <

SOIC-8 D

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain TA=25°C

Current

TA=70°C

Pulsed Drain Current C

Avalanche Current C

Avalanche energy L=0.1mH C

IDM IAS, IAR EAS, EAR

TA=25°C Power Dissipation B TA=70°C

Junction and Storage Temperature Range

TJ, TSTG

Maximum 30 ±20 19 15 130 38 72 2
-55 to 150

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient A t 10s Maximum Junction-to-Ambient A D Steady-State
31 59

Maximum Junction-to-Lead

Steady-State

Max 40 75 24

Units V

A mJ W °C

Units °C/W °C/W °C/W

Page 1 of 6

AO4402L

Electrical Characteristics TJ=25°C unless otherwise noted

Parameter

Conditions

Min Typ Max Units

STATIC PARAMETERS

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Datasheet ID: AO4202L 516159