AO4202_120
AO4202_120 Datasheet
AO4202
| Part | Datasheet |
|---|---|
AO4202_120 |
AO4202_120 (pdf) |
| PDF Datasheet Preview |
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| AO4202 30V N-Channel MOSFET The AO4202 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS ON and Crss. In addition, switching behavior is well controlled with a “Schottky style” soft recovery body diode. Product Summary VDS ID at VGS=10V RDS ON at VGS=10V RDS ON at VGS = 4.5V 100% UIS Tested 100% Rg Tested 30V 19A < < SOIC-8 Top View Bottom View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C IDM IAS, IAR EAS, EAR TA=25°C Power Dissipation B TA=70°C Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 19 15 130 38 72 2 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A t 10s Maximum Junction-to-Ambient A D Steady-State 31 59 Maximum Junction-to-Lead Steady-State Max 40 75 24 Units V A mJ W °C Units °C/W °C/W °C/W Page 1 of 6 AO4202 Electrical Characteristics TJ=25°C unless otherwise noted Parameter |
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