AOI4144_002

AOI4144_002 Datasheet

AOD4144/AOI4144/AOU4144

Part	Datasheet
AOI4144_002	AOI4144_002 (pdf)

Related Parts	Information
AOD4144_003	AOD4144_003

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AOD4144/AOI4144/AOU4144 30V N-Channel MOSFET SDMOS TM The AOD4144/AOI4144/AOU4144 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. Product Summary VDS ID at VGS=10V RDS ON at VGS=10V RDS ON at VGS = 4.5V 100% UIS Tested 100% Rg Tested 30V 55A < < TO251A TO252 TO251 IPAK DPAK Top View Bottom View Top View Bottom View Top View Bottom View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current G TC=25°C TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 55 42 110 13 10 30 45 50 25 -55 to 175 Thermal Characteristics

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AOD4144/AOI4144/AOU4144
30V N-Channel MOSFET SDMOS TM

The AOD4144/AOI4144/AOU4144 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications.

Product Summary

VDS ID at VGS=10V RDS ON at VGS=10V RDS ON at VGS = 4.5V
100% UIS Tested 100% Rg Tested
30V 55A < <

TO251A

TO252

TO251

IPAK

DPAK

Top View

Bottom View

Top View

Bottom View

Top View

Bottom View

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current G

TC=25°C TC=100°C

Pulsed Drain Current C

Continuous Drain

TA=25°C

Current

TA=70°C

Avalanche Current C

Avalanche energy L=0.1mH C

IDSM

IAS, IAR EAS, EAR

TC=25°C Power Dissipation B TC=100°C

TA=25°C Power Dissipation A TA=70°C

PDSM

Junction and Storage Temperature Range

TJ, TSTG

Maximum 30 ±20 55 42 110 13 10 30 45 50 25
-55 to 175

Thermal Characteristics

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Datasheet ID: AOI4144_002 516150